MEASUREMENT OF PATTERNED WAFER SURFACE DEFECTS USING ANNULAR EVANESCENT LIGHT ILLUMINATION METHOD
Toshie Yoshioka, Takashi Miyoshi, Yasuhiro Takaya
Abstract:
To detect particulate defects on patterned wafers of below 100 nm design rule, we proposed a new detection method using evanescent light illumination. To verify the feasibility of the method, we performed fundamental experiments. The results show that particle with a size of 170 nm on the patterned wafer surface with about 400 nm pitch is detected.
Keywords:
near field optics, wafer inspection, nanomeasurements
Download:
PWC-2006-TC2-001u.pdf
DOI:
-
Event details
Event name:
XVIII IMEKO World Congress
Title:

Metrology for a Sustainable Development

Place:
Rio de Janeiro, BRAZIL
Time:
17 September 2006 - 22 September 2006
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