A SYSTEM FOR MONITORING THE SPATIAL AND INTENSITY DISTRIBUTION ON CCD PATTERNS APPLIED TO IN SITU CHARACTERIZATION

Mario Carpentieri, Juan Pedro Silveira, Romano Giannetti

Abstract

The monitoring of a few critical parameters during epitaxal growth is necessary in order to obtain high quality III-V semiconductor heterostructures. We have developed an electronic circuit that is able to perform realtime analysis of the spatial distribution and intensity of RHEED (reflected high energy electron diffraction) patterns by means of a CCD camera. Besides being used for obtaining information from RHEED patterns, the new system can also be employed for in situ and real time stress measurements during molecular beam epitaxy of lattice mismatched heterostructures.

Keywords

Molecular Beam Epitaxy, FPGA, in situ monitoring

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PWC-2003-TC4-067.pdf

DOI

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IMEKO TC

TC4 - Measurement of Electrical Quantities

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