PRELIMINARY EVALUATION OF QUANTUM HALL EFFECT DEVICES BY PHOTOREFLECTANCE SPECTROSCOPY

L. Zamora-Peredo, M. Hernández-Sustaita, Ivan C. Hernández, V. H. Méndez-García, M. López-López

Abstract

Internationally, an electrical resistance standard is based on quantum Hall effect devices and, usually, these are based in AlGaAs/GaAs heterostructures. In this work we report the study of a set of quantum Hall effect devices by photoreflectance spectroscopy at 300 K. An optical signal associated to the electric field build in the 2DEG region was found and it was used to identify the samples with superior electron mobility. With this study, is possible to offer an excellent nondestructive method before to make electrical contacts and magnetoresistance measurements.

Keywords

quantum Hall effect, AlGaAs/GaAs heterostructure, photoreflectance spectroscopy

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IMEKO-WC-2009-TC4-482.pdf

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IMEKO TC

TC4 - Measurement of Electrical Quantities

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