DETERMINATION OF ADSORTION LAYERS ON SILICON SORPTION ARTIFACTS USING MASS COMPARISON

Unurbileg Darmaa, Jin Wan Chung, Sungjun Lee, Seung Nam Park

Abstract

The adsorption layers on the surface of silicon artifact have been determined experimentally as a function of relative air humidity in the range of 0.07 < <i>h</i> < 0.73 using gravimetric method. For the purpose of this work 1 kg silicon sorption artifacts were fabricated, which have same surface finish, material properties but with very different surface area of 507.8 cm2. In this experiment ultra precision mass comparator and special humidity control unit were used. The adsorption isotherm of water vapor on the silicon surface with <i>R_z</i> < 26.6 nm measured and sorption behavior of silicon surface is being type II by BET classification, BET parameters <i>µ</i>_m = 0.017 µg/cm², <i>c</i>_B = 9.3 were found. The coefficient of water vapor adsorption in moist air was &delta;<i>µ</i>/&delta;<i>h</i> = 65.3 ng cm^-2 %^-1 in the limited humidity range of 0.3 < <i>h</i> < 0.6.

Keywords

silicon sorption artifacts, mass comparison, adsorption layer

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IMEKO TC

TC3 - Measurement of Force, Mass, Torque, and Gravity

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