GIANT MAGNETORESISTIVE EFFECT IN NON-MAGNETIC SILICON

Tae Ho Lee, Hong-Seok Kim,Woo Lee, Yong-Joo Doh

Abstract

We report that a simple device, based on a lightly doped silicon substrate contacted with two indium contacts, shows a positive magnetoresistance over 1,000 per cent for magnetic fields between 0 and 1 T at low temperature of 3 K. Current-voltage characteristics exhibit a nonlinear behavior, which is highly sensitive to temperature and magnetic field. Since our device is based on a conventional silicon platform and is highly sensitive to low magnetic field, it could be used to develop new devices of silicon-based magnetoelectronics.

Keywords

magnetoresistance, silicon

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IMEKO-WC-2012-TC4-P17.pdf

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IMEKO TC

TC4 - Measurement of Electrical Quantities

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