A COMBINED METHOD OF NONCONTACT TEMPERATURE MEASUREMENT FOR SILICON WAFERS

Y. Toyoda, T. Seo, T. Iuchi

Abstract

This paper presents a non-contact temperature measurement method for silicon wafers with combined utilization of transmittance technique at low temperature and radiation thermometry at high temperature because wafers are semitransparent at temperatures less than 600 °C and opaque at more than that. In this method, we utilize polarization technique and the <i>Brewster angle</i> between air and dielectric films that are grown on silicon wafers. The measurements are performed at the same geometrical arrangement and unaffected by dielectric film thicknesses. As a result, the combined method is widely applicable at temperatures from room to more than 1000 °C for silicon wafers.

Keywords

transmittance, emissivity, polarization, dielectric film, silicon wafer

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IMEKO-WC-2012-TC12-O8.pdf

DOI

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IMEKO TC

TC12 - Temperature and Thermal Measurements

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