RAMAN ANALYSIS ON NANOCRYSTALLINE SILICON FILM

Min Gyu Park, Se-Bum Choi, Nam Woon Kim, Hyunung Yu

Abstract

A compact dot marker using a cw laser on a microcrystalline silicon (µc-Si:H) thin film is demonstrated. Annealing process using a laser leads to a continuous crystallization from nano to sub-micron domain (> 50 nm) of Si nanocrystals within the thin film. This patterning is quite useful because we can manipulate 2-D process of silicon structural forms for an efficient thin-film transistor (TFT) devices with respect to uniform electron mobility. A Raman microscope is quite useful to reveal a crystal volume fraction with a calculation from the population ratio between crystalline and amorphous phase.

Keywords

laser, fluence, silicon film, Raman crystallinity

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IMEKO-WC-2012-SS2-P6.pdf

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