PATTERNED WAFER DEFECTS INSPECTION BY LASER SCATTERING IMAGE

S. Takahashi, T. Miyoshi, Y. Takaya

Abstract

A new optical measurement method for detecting the semiconductor pattern defects, which does not depend on the physical limit of optical image formation, is presented. The experimental system consists of the Fourier transform optical system using of a high-power objective. In order to verify the feasibility of application of our proposed method to next-generation patterned wafer inspection technique, several primary experiments were carried out. It is shown that the proposed method is effective for detecting the small particle contaminants on the semiconductor circuits.

Keywords

patterned wafer inspection, laser applied measurement, laser scattering image

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IMEKO-WC-2000-TC2-P055.pdf

DOI

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IMEKO TC

TC2 - Photonics

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