NEW PIEZORESISTIVE SILICON HIGH PRESSURE SENSOR

S. Stavroulis, R. Werthschützky

Abstract

For current known piezoresistive silicon pressure sensors, the pressure to be measured is transformed into an elastic deformation of the strongly bounded silicon diaphragm. The resistance value of the implanted piezoresistors on the silicon diaphragm is modified through the resulted mechanical tensions on the material. The etched silicon diaphragm demonstrates a limited burst tension, so that the usual silicon pressure sensors with a diaphragm can only be utilised to measure a maximal pressure of 10³ bar.<BR />The pressure sensitive element is made up of a not thinned silicon chip with piezoresistors on its upper surface and of a whole-surface glass substrate (Pyrex) bonding connection on its bottom side. The different Young moduli of Silicon and Pyrex implies, by all sided-pressure load, the appearance of mechanical tensions in the bounding surface between the two materials. These mechanical tensions in the silicon chip produce a modification of the piezoresistor resistance implanted in the upper surface because of the piezoresistive effect.

Keywords

piezoresistive, high pressure sensor

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IMEKO-WC-2000-TC16-P443.pdf

DOI

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IMEKO TC

TC16 - Pressure and Vacuum Measurement

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