MODEL BASED AUTODIAGNOSTICS OF SEMICONDUCTOR COMPOUNDS SYNTHESIS AND POLICRYSTALLIZATION PROCESS

Marek Orzyłowski, Zbigniew Rudolf

Abstract

The process of synthesis and polycrystallization of InP is performed in hermetic welded quartz ampoule placed in the two zone furnace. The temperature of synthesis and crystallization zone is up to 1100°C. The pressure of phosphorus vapor inside the ampoule results from the temperature of low temperature zone which rises up to 570°C and can reach 3.0 MPa. Because of high pressure of the vapor inside the ampoule it should be compensated by pressure of neutral gas outside the ampoule and thus the whole furnace should be located in the autoclave. The measurements of temperature distribution and pressure of the reactor during multi-step process are in industrial conditions practical unfeasible. To avoid implosion or explosion of the ampoule the autodiagnostics is applied. The autodiagnostics makes use of the process reference model based on the indirect measurements of measurable state variables.

Keywords

autodiagnostics, indirect measurement, reference model, semiconductor compounds synthesis

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DOI

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IMEKO TC

TC7 - Measurement Science

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