THE GROWTH OF THE OXIDE LAYER ON SILICON SPHERES AND ITS INFLUENCE ON THEIR MASS STABILITY

M. Borys, M. Mecke, U. Kuetgens, I. Busch, M. Krumrey, P. Fuchs, K. Marti, H. Bettin

Abstract

The first results of gravimetric measurements of the growth of the oxide layer on single-crystal silicon spheres are presented and compared with a theoretical model and with measurements of the surface layer based on X-ray and ellipsometric methods. From the results, conclusions can be drawn about the quantitative influence of the growth of the oxide layer on the mass stability of silicon spheres.

Keywords

New SI, kilogram, Avogadro project, Si spheres, mass stability, silicon oxide

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IMEKO-TC3-2014-026.pdf

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IMEKO TC

TC3 - Measurement of Force, Mass, Torque, and Gravity

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