MEASUREMENT OF PATTERNED WAFER SURFACE DEFECTS USING ANNULAR EVANESCENT LIGHT ILLUMINATION METHOD

Toshie Yoshioka, Takashi Miyoshi, Yasuhiro Takaya

Abstract

To detect particulate defects on patterned wafers of below 100 nm design rule, we proposed a new detection method using evanescent light illumination. To verify the feasibility of the method, we performed fundamental experiments. The results show that particle with a size of 170 nm on the patterned wafer surface with about 400 nm pitch is detected.

Keywords

near field optics, wafer inspection, nanomeasurements

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PWC-2006-TC2-001u.pdf

DOI

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IMEKO TC

TC2 - Photonics

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