MAGNETOSTRICTIVE DELAY LINE THIN FILMS AS SENSING ELEMENTS

E. Hristoforou, K. Kosmas, E. Gravvanis, DM Kepaptsoglou, N. Kontos

Abstract

A miniaturized arrangement based on magnetostrictive delay line (MDL) mechanism, able to be used as sensor, is realized using thin films technology. In order to obtain high-performance miniaturized magnetostrictive delay line arrangement we used Fe, Ni and Fe70B20Si6C4 amorphous thin films as magnetostrictive sensing element because of their better magnetic and magnetoelastic characteristics than conventional magnetostrictive thin films. A monolithic design has been achieved with the electric equipment and sensing element contained onto the same silicon substrate.

Keywords

sensors, thin films, magnetostriction

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IMEKO-TC4-2001-062.pdf

DOI

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IMEKO TC

TC4 - Measurement of Electrical Quantities

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