A review on Silicon Carbide and Gallium Nitride features, reliability and behaviour in the presence of radiations

Alberto Carboni

Abstract

In these years electronics is facing a great change because of the introduction of new materials, i.e. Silicon Carbide (SiC) and Gallium Nitride (GaN). These materials feature great electrical and thermal properties. The current semiconductor solutions have pushed Si and GaAs at their very limits in terms of thermal behavior and efficiency.<BR />The new semicondcutors, i.e. silicon carbide and gallium nitride, has opened the way to new possibilities and challenges.<BR />In addition, SiC and GaN prove to perform well also in the presence of radiations.<BR />This first part of this review deals with silicon carbide and gallium nitride electrical and thermal features.<BR />The second part deals with GaN behavior in the presence of radiations.<BR />Finally, the third part deals with short and long-term reliability issues of new GaN-based devices.

Keywords

SiC, GaN, reliability, radiation

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IMEKO-TC10-2016-068.pdf

DOI

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IMEKO TC

TC10 - Measurement for Diagnostics, Optimization and Control

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