Ultra-low-power SOI CMOS Pressure Sensor Based on Orthogonal PMOS Gauges

N. André, T. P. Delhaye, M. Al Kadi Jazairli, B. Olbrechts, P. Gérard, L. A. Francis, J.-P. Raskin, D. Flandre

Abstract

In this work, an ultra-low-power SOI CMOS pressure sensoris presented, using P-type MOSFET strain gauges to embed an active transducer in a 1 mm² 1.5 µm-thick membrane. The system demonstrates: (i) a maximumsensitivity of 700 ppm/mbar, (ii) a precision down to 2 mbars, (iii) a power consumption less than 10 µW for the PMOStransducer.

Keywords

pressure sensor, membrane, MOSFET, ultra-low-power

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IMEKO TC

TC4 - Measurement of Electrical Quantities

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