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MOSFET-only 3rd-order Σ-Δ modulators

Alan J. Davis, Godi Fischer, Wai Yung, Chuen-Song Chen

Abstract

The linearity of higher order Σ-Δ modulator using MOSFET capacitors is examined. Two 3<sup>rd</sup>-order network structures are investigated. For low-voltage power supplies with reference voltages under 1 volt, the performance of a MOSFET-only modulator is predicted to be very close to that of a modulator using linear capacitors. It is possible to realize similar performance in selected modulator network structures. We investigate the performance of a 2-1 cascade and a 3<sup>rd</sup>-order iflf topology in a 0.35 µm process.

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IMEKO-IWADC-2003-12.pdf
DOI
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IMEKO TC
TC4 - Measurement of Electrical Quantities

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Event
iwadc-2003

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