Direct Comparison of Quantum Hall Resistance in Graphene and Gallium Arsenide in Liquid Helium

Ngoc Thanh Mai Tran, Jaesung Park, Dong-Hun Chae

Abstract

Direct comparison of quantum Hall resistance in the same or different materials requires demanding experimental resources, such as two separate cryostats or a specially designed dual-socket probe operating far below the temperature of liquid helium. Here we experimentally demonstrate an efficient direct comparison of quantum Hall resistance in graphene and gallium arsenide/aluminium gallium arsenide heterostructure in liquid helium at 4.2 K with a standard probe from the practical point of view. To perform the direct comparison with one probe, we stacked two Hall devices with a printed circuit board and mating pins and employed a gallium arsenide Hall device with a high electron density. The direct comparison shows that the relative difference in quantized Hall resistance between the two materials in liquid helium is as small as 5 nΩ/Ω.

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IMEKO-TC4-2022-02.pdf

DOI

10.21014/tc4-2022.02

IMEKO TC

TC4 - Measurement of Electrical Quantities

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