Static Characterization of the X-Hall Current Sensor in BCD10 Technology

Gian Piero Gibiino, Marco Crescentini, Marco Marchesi, Marco Cogliati, Aldo Romani, Pier Andrea Traverso

Abstract

This work presents on-wafer characterization measurements of the X-Hall current sensor architecture implemented in 90-nm BCD10 silicon process by STMicroelectronics. With respect to a previous implementation, technological improvements in terms of active region, isolation layers, and metal stack configuration result in a substantially improved sensitivity. In addition, it is reported that the sensitivity can be further improved by applying a negative voltage to the depletion layer.

Download

IMEKO-TC4-2022-58.pdf

DOI

10.21014/tc4-2022.58

IMEKO TC

TC4 - Measurement of Electrical Quantities

Back to the proceedings