UNCERTAINTY IMPROVEMENT OF GEOMETRICAL THICKNESS MEASUREMENT OF A SILICON WAFER USING A FEMTOSECOND PULSE LASER |
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| Jungjae Park, Saerom Maeng, Jae Wan Kim, Jong-Ahn Kim, Jonghan Jin |
- Abstract:
- We describe a method to simultaneously measure geometrical thickness and refractive index of a silicon wafer using a femtosecond pulse laser having 100 nm spectral bandwidth. The improved phase measurement algorithm is applied to increase insensitivity to environmental disturbances and interferometer noise. The measurement results show that the geometrical thickness and refractive index of a silicon wafer were measured to be 320.699 µm and 3.621 respectively, which are the improved results by about one order of magnitude in comparison with previous research. By considering the dispersion effect caused by 100 nm bandwidth source, the conclusion can be reached that there is no dispersion effect on measurement of geometrical thickness.
- Keywords:
- interferometry, pulsed laser, infrared, spectrometer, silicon wafer
- Download:
- IMEKO-WC-2012-TC14-O10.pdf
- DOI:
- -
- Event details
- Event name:
- XX IMEKO World Congress
- Title:
Metrology for Green Growth
- Place:
- Busan, REPUBLIC of KOREA
- Time:
- 09 September 2012 - 12 September 2012