THE GROWTH OF THE OXIDE LAYER ON SILICON SPHERES AND ITS INFLUENCE ON THEIR MASS STABILITY |
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| M. Borys, M. Mecke, U. Kuetgens, I. Busch, M. Krumrey, P. Fuchs, K. Marti, H. Bettin |
- Abstract:
- The first results of gravimetric measurements of the growth of the oxide layer on single-crystal silicon spheres are presented and compared with a theoretical model and with measurements of the surface layer based on X-ray and ellipsometric methods. From the results, conclusions can be drawn about the quantitative influence of the growth of the oxide layer on the mass stability of silicon spheres.
- Keywords:
- New SI, kilogram, Avogadro project, Si spheres, mass stability, silicon oxide
- Download:
- IMEKO-TC3-2014-026.pdf
- DOI:
- -
- Event details
- IMEKO TC:
- TC3
- Event name:
- TC3 Conference 2014
- Title:
22nd Conference on the Measurement of Force, Mass and Torque (together with 3rd TC22 Conference on Vibration Measurement and 12th TC5 Conference on the Measurement of Hardness)
- Place:
- Cape Town, SOUTH AFRICA
- Time:
- 03 February 2014 - 06 February 2014