A review on Silicon Carbide and Gallium Nitride features, reliability and behaviour in the presence of radiations |
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| Alberto Carboni |
- Abstract:
- In these years electronics is facing a great change because of the introduction of new materials, i.e. Silicon Carbide (SiC) and Gallium Nitride (GaN). These materials feature great electrical and thermal properties. The current semiconductor solutions have pushed Si and GaAs at their very limits in terms of thermal behavior and efficiency.
The new semicondcutors, i.e. silicon carbide and gallium nitride, has opened the way to new possibilities and challenges.
In addition, SiC and GaN prove to perform well also in the presence of radiations.
This first part of this review deals with silicon carbide and gallium nitride electrical and thermal features.
The second part deals with GaN behavior in the presence of radiations.
Finally, the third part deals with short and long-term reliability issues of new GaN-based devices. - Keywords:
- SiC, GaN, reliability, radiation
- Download:
- IMEKO-TC10-2016-068.pdf
- DOI:
- -
- Event details
- IMEKO TC:
- TC10
- Event name:
- TC10 Workshop on Technical Diagnostics 2016
- Title:
14th IMEKO TC10 Workshop “New Perspectives in Measurements, Tools and Techniques for system’s reliability, maintainability and safety”
- Place:
- Milano, ITALY
- Time:
- 27 June 2016 - 28 June 2016