Ultra-low-power SOI CMOS Pressure Sensor Based on Orthogonal PMOS Gauges |
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| N. André, T. P. Delhaye, M. Al Kadi Jazairli, B. Olbrechts, P. Gérard, L. A. Francis, J.-P. Raskin, D. Flandre |
- Abstract:
- In this work, an ultra-low-power SOI CMOS pressure sensoris presented, using P-type MOSFET strain gauges to embed an active transducer in a 1 mm² 1.5 µm-thick membrane. The system demonstrates: (i) a maximumsensitivity of 700 ppm/mbar, (ii) a precision down to 2 mbars, (iii) a power consumption less than 10 µW for the PMOStransducer.
- Keywords:
- pressure sensor, membrane, MOSFET, ultra-low-power
- Download:
- IMEKO-TC4-2017-006.pdf
- DOI:
- -
- Event details
- IMEKO TC:
- TC4
- Event name:
- TC4 Symposium 2017
- Title:
22nd IMEKO TC4 Symposium and 20th International Workshop on ADC Modelling and Testing
"Supporting world development through electric&electronic measurements"- Place:
- Iasi, ROMANIA
- Time:
- 14 September 2017 - 15 September 2017