Advanced experimental setup for reliability and current consumption measurements of Flash non-volatile memories |
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| Vincenzo Della Marca, Tariq Wakrim, Jérémy Postel-Pellerin, Pierre Canet |
- Abstract:
- In this paper we present a new experimental setup that enables static, dynamic and high voltage electrical characterization for the Flash memory cell. Using an Agilent B1500 parameter analyzer and its embedded modules we minimized the effects of the parasitic connection between different instruments. The current consumption of a memory cell is generally measured using a current/voltage converter or the Floating Gate technique. Our setup is able to measure dynamically the current consumption with a sampling time of several nanoseconds during a hot carrier injection. Moreover we can evaluate the degradation of memory cell performances including endurance test, and its impact on the cell memory consumption. Our method is implemented to test 90nm technology node Flash memories, but it can also be used for future ultra-scaled technologies. Moreover we propose to use our technique to demonstrate the dependence of drain current consumption on the defects generation due to the endurance degradation. In conclusion we implemented this original and flexible method to better understand the Flash memory behavior for advanced embedded and low energy applications.
- Keywords:
- Flash memories, energy consumption, endurance, charge trapping
- Download:
- IMEKO-TC4-2014-224.pdf
- DOI:
- -
- Event details
- IMEKO TC:
- TC4
- Event name:
- TC4 Symposium 2014
- Title:
20th IMEKO TC4 Symposium on Measurements of Electrical Quantities (together with 18th TC4 International Workshop on ADC and DCA Modeling and Testing, IWADC)
"Research on Electrical and Electronic Measurement for the Economic Upturn"- Place:
- Benevento, ITALY
- Time:
- 15 September 2014 - 17 September 2014